epitaxial layer वाक्य
उदाहरण वाक्य
मोबाइल
- The overlayer is called an epitaxial film or epitaxial layer.
- Formation of this epitaxial layer occurs at the substrate surface.
- Normally the epitaxial layers are lattice matched ( which restricts the choice of bandgap etc ).
- One of the first successful mercury probe applications was the characterization of epitaxial layers grown on silicon.
- It is critical to device performance to monitor the doping level and thickness of an epitaxial layer.
- Strain in the epitaxial layer and substrate is visible as elongated streaks parallel to the diffraction vector direction.
- Micropipes and screw dislocations in epitaxial layers are normally derived from the substrates on which the epitaxy is performed.
- Devices fabricated in lightly doped epitaxial layers grown on heavily doped substrates are also less susceptible to latch-up.
- The growth conditions for such epitaxial layers can cause some ceramic substrates to form high densities of defects that can alter their properties.
- The resistance of the epitaxial layer is more important than it is for a transistor, as the current must cross its entire thickness.
- A mercury probe connected to capacitance-voltage doping profile instrumentation could measure an epitaxial layer as soon as it came out of the epitaxial reactor.
- Two main parameters govern both the breakdown voltage and the R DSon of the transistor : the doping level and the thickness of the N " epitaxial layer.
- However, it will form a polycrystalline film unless tightly controlled, and it allows oxidizing species that leak into the reactor to contaminate the epitaxial layer with unwanted compounds such as silicon dioxide.
- With a vertical structure, the voltage rating of the transistor is a function of the epitaxial layer ( see cross section ), while the current rating is a function of the channel width.
- In a CCD for capturing images, there is a photoactive region ( an epitaxial layer of silicon ), and a transmission region made out of a shift register ( the CCD, properly speaking ).
- With the vertical structure, the component area is roughly proportional to the current it can sustain, and the component thickness ( actually the N-epitaxial layer thickness ) is proportional to the breakdown voltage.
- The clocking of the gates, alternately high and low, will forward and reverse bias the diode that is provided by the buried channel ( n-doped ) and the epitaxial layer ( p-doped ).
- The epitaxial layers may consist of compounds with particular desirable features such as gallium nitride ( GaN ), gallium arsenide ( GaAs ), or some combination of the elements gallium, indium, aluminum, nitrogen, phosphorus or arsenic.
- Materials used for the substrate include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminium gallium arsenide / gallium arsenide, and indium phosphide / indium gallium arsenide are used for the epitaxial layers.
- The voltage rating of the transistor is a function of the doping and thickness of the N-epitaxial layer ( see cross section ), while the current rating is a function of the channel width ( the wider the channel, the higher the current ).
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